Thin Ag Precursor Layer-Assisted Co-Evaporation Process for Low-Temperature Growth of Cu(In,Ga)Se2 Thin Film

Title
Thin Ag Precursor Layer-Assisted Co-Evaporation Process for Low-Temperature Growth of Cu(In,Ga)Se2 Thin Film
Authors
김원목박종극정증현유형근김가연김동환
Keywords
CIGS solar cell; Ag doping; Ga grading; grain coarsening
Issue Date
2019-09
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 11, NO 35-31933
Abstract
Achieving favorable band profile in low-temperature-grown Cu(In,Ga)Se2 thin films has been challenging due to the lack of thermal diffusion. Here, by employing a thin Ag precursor layer, we demonstrate a simple co-evaporation process that can effectively control the Ga depth profile in CIGS films at low temperature. By tuning the Ag precursor thickness (∼20 nm), typical V-shaped Ga gradient in the copper indium gallium diselenide (CIGS) film could be substantially mitigated along with increased grain sizes, which improved the overall solar cell performance. Structural and compositional analysis suggests that formation of liquid Ag– Se channels along the grain boundaries facilitates Ga diffusion and CIGS recrystallization at low temperatures. Formation of a fine columnar grain structure in the first evaporation stage was beneficial for subsequent Ga diffusion and grain coarsening. Compared to the modified co-evaporation process where the Ga evaporation profile has been directly tuned, the Ag precursor approach offers a convenient route for absorber engineering and is potentially more applicable for roll-to-roll fabrication system.
URI
http://pubs.kist.re.kr/handle/201004/70078
ISSN
1944-8244
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KIST Publication > Article
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