Hole mobility characteristics with surface roughness on silicon-on-insulator substrate

Title
Hole mobility characteristics with surface roughness on silicon-on-insulator substrate
Authors
한일기Hyeseon ShinJae-Hyeon KoMoongyu Jang
Keywords
Surface roughness; hole mobility; SOI
Issue Date
2018-09
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 18, NO 9-6020
Abstract
Hole mobility characteristics were investigated with surface roughness and silicon-on-insulator (SOI) thickness variations to investigate the influence of surface roughness to mobility. The root mean square roughness varied between 0.16, 0.85 and 10.6 nm in 220, 100 and 40 nm thick SOI samples. Hole mobility was measured and analyzed as a function of effective field and temperature with the variations of surface roughness. The hole mobility, determined by transconductance, greatly decreased with the increase of effective field due to the increased surface roughness scattering in 40 nm thick SOI samples. On the other hand, phonon scattering was a dominant mechanism with the increase of temperature, irrespective of surface roughness and SOI thickness. The induced surface roughness of the devices increases the phonon scattering, thereby reducing the electron and hole mobility. The hole mobility decreases with the roughening of the samples, with the increase of temperature due to increased phonon scattering. Therefore, for enhanced mobility, surface scattering and phonon scattering should be controlled even in atomic scale roughened samples.
URI
http://pubs.kist.re.kr/handle/201004/70213
ISSN
1533-4880
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE