A new etching process of zinc oxide with controllable etching rate and crystal plane: experiment, calculation, and membrane application

Title
A new etching process of zinc oxide with controllable etching rate and crystal plane: experiment, calculation, and membrane application
Authors
유성종이정희유태경정지용김경학이재영한정우김진수
Issue Date
2019-07
Publisher
Nanoscale
Citation
VOL 11, NO 25-12337-10
Abstract
The etching process can be a useful method for the morphology control of nanostructures. Using precise experiments and theoretical calculations, we report a new ZnO etching process triggered by the reaction of ZnO with transition metal cations and demonstrate that the etching rate and direction could be controlled by varying the kind of transition metal cation. In addition, the developed etching process was introduced to form a thin and uniform ZnO layer, which was utilized for the fabrication of an improved propylene-selective ZIF-8 membrane via conversion seeding and secondary growth.
URI
http://pubs.kist.re.kr/handle/201004/70260
ISSN
2040-3364
Appears in Collections:
KIST Publication > Article
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