Characterization of collective ground states in single-layer NbSe2

Characterization of collective ground states in single-layer NbSe2
류혜진Miguel M. UgedaAaron J. BradleyYi ZhangSeita OnishiYi ChenWei RuanClaudia Ojeda-AristizabalMark T. EdmondsHsin-Zon TsaiAlexander RissSung-Kwan MoDunghai LeeAlex ZettlZahid HussainZhi-Xun ShenMichael F. Crommie
Issue Date
Nature physics
VOL 12, NO 1-97
Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at T-CDW = 33 K and superconductivity sets in at T-c = 7.2 K. Below T-c these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single two-dimensional (2D) layer of NbSe2 by means of low-temperature scanning tunnelling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3 x 3 CDW order in NbSe2 remains intact in two dimensions. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Delta = 4 meV at the Fermi energy, which is accessible by means of STS owing to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing insight into CDW formation and superconductivity in this model strongly correlated system.
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