Multiband effects on beta-FeSe single crystals

Title
Multiband effects on beta-FeSe single crystals
Authors
류혜진Hechang LeiD. GrafRongwei HuE. S. ChoiS. W. TozerC. Petrovic
Issue Date
2012-03
Publisher
Physical review B, Condensed matter and materials physics
Citation
VOL 85, NO 9-094515-5
Abstract
We present the upper critical fields mu H-0(c2)(T) and Hall effect in beta-FeSe single crystals. The mu H-0(c2)(T) increases as the temperature is lowered for fields applied parallel and perpendicular to (101), the natural growth facet of the crystal. The mu(0)Hc(2)(T) for both field directions and the anisotropy at lowtemperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate mu H-0(c2)(T) and electronic transport in the normal state.
URI
http://pubs.kist.re.kr/handle/201004/70301
ISSN
2469-9950
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE