Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2

Title
Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2
Authors
류혜진Rongwei HuKefeng WangHechang LeiE. S. ChoiM. UhlarzJ. WosnitzaC. Petrovic
Issue Date
2012-12
Publisher
Physical review letters
Citation
VOL 109, NO 25-256401-5
Abstract
We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb2, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb1-xTex)(2) single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x >= 0.075). DOI: 10.1103/PhysRevLett.109.256401
URI
http://pubs.kist.re.kr/handle/201004/70302
ISSN
0031-9007
Appears in Collections:
KIST Publication > Article
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