Impact of H­Doping on n­Type TMD Channels for Low­Temperature Band­Like Transport

Title
Impact of H­Doping on n­Type TMD Channels for Low­Temperature Band­Like Transport
Authors
황도경안종태Han Sol LeeSam ParkJune Yeong LimSanghyuck YuYumin SimJe-Ho LeeMaeng-Je SeongSehoon Oh최형준임성일
Issue Date
2019-09
Publisher
Small
Citation
VOL 15, NO 38-1901793-8
Abstract
Band‐ like transport behavior of H‐ doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low‐ temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n‐ type conduction and their mobility increases without losing on‐ state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p‐ or n‐ type. Density functional theory calculations show that H‐ doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H‐ doped TMD channels is metallic showing band‐ like transport rather than thermal hopping. These results indicate that H‐ doped TMD FETs are practically useful even at low‐ temperature ranges.
URI
http://pubs.kist.re.kr/handle/201004/70442
ISSN
1613-6810
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KIST Publication > Article
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