Impact of HDoping on nType TMD Channels for LowTemperature BandLike Transport
- Impact of HDoping on nType TMD Channels for LowTemperature BandLike Transport
- 황도경; 안종태; Han Sol Lee; Sam Park; June Yeong Lim; Sanghyuck Yu; Yumin Sim; Je-Ho Lee; Maeng-Je Seong; Sehoon Oh; 최형준; 임성일
- Issue Date
- VOL 15, NO 38-1901793-8
- Band‐ like transport behavior of H‐ doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low‐ temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n‐ type conduction and their mobility increases without losing on‐ state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p‐ or n‐ type. Density functional theory calculations show that H‐ doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H‐ doped TMD channels is metallic showing band‐ like transport rather than thermal hopping. These results indicate that H‐ doped TMD FETs are practically useful even at low‐ temperature ranges.
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