Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Title
Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application
Authors
이기영박태언이재준권주영서동제나주관박상원이효정이승우최헌진
Keywords
Si nanosheets; doping; CMOS compatibility; transistors; heterostructure
Issue Date
2019-11
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 11, NO 45-42519
Abstract
Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal– oxide– semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p– n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼106 and field-effect hole mobility of 329 cm2 V– 1 s– 1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p– n junction diodes with MoS2, which exhibit rectifying properties and excellent light response.
URI
http://pubs.kist.re.kr/handle/201004/70467
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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