The Importance of p-Doping for Quantum Dot Laser on Silicon Performance

Title
The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
Authors
정대환Justin C. NormanZeyu ZhangChen ShangMJ KennedyMario DumontRobert HerrickArthur C. GossardJohn E. Bowers
Issue Date
2019-12
Publisher
IEEE journal of quantum electronics
Citation
VOL 55, NO 6-2001111-11
Abstract
p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.
URI
http://pubs.kist.re.kr/handle/201004/70543
ISSN
0018-9197
Appears in Collections:
KIST Publication > Article
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