Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation
- Dual growth mode of boron nitride nanotubes in high temperature pressure laser ablation
- 김명종; 이헌수; 안석훈; 장세규; 탕 비엣 팜; 김준희; 조현진; 황재훈; Cheol Park; 김철생
- BNNT; Growth Mechanism
- Issue Date
- Scientific Reports
- VOL 9-15674
- The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution transmission electron microscopy (HR-TEM) can provide valuable insight into the growth mechanism in high temperature pressure (HTP) laser ablation where the best quality of BNNT materials can be obtained so far. Two growth modes of BNNT coexisting during the synthesis process have been proposed based on HR-TEM observation and length analysis. One is the root growth mode, in which boron nitride (BN) species formed via the surface interaction between surrounding N2 molecules and boron nanodroplets incorporate into the tubular structure. Another mode called open-end growth mode means the prolongation of tube growth from the exposed BN edge surrounding the surface of boron nanodroplets which is constructed by the heterogeneous nucleation of absorbed BN radicals from the gas plume. The statistical data, the proportions of end structures and the length of BNNTs, could be fitted to two growth modes, and the open-end growth mode is found to be especially effective in producing longer nanotubes with a higher growth rate. The scientific understanding of the growth mechanism is believed to provide the control for optimized production of BNNTs.
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