Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method

Title
Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method
Authors
강종윤Mir ImWoong-Hee LeeSang-Hyo KweonSahn Nahm
Issue Date
2019-04
Publisher
Journal of the European Ceramic Society
Citation
VOL 39, NO 4-1155
Abstract
TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO− nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18  nm) owing to the presence of TBA+ between the TNO layers. The TBA+, which were used to synthesize the TNO− nanosheets, were removed from the TNO film after annealing at 600  °C. Two types of structures were developed in the film annealed at 600  °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71  nm, respectively. The TNO film annealed at 600  °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16  ×  10− 7 A/cm2 at 0.6  MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300  °C. Therefore, TNO films are good candidates for high-temperature capacitors.
URI
http://pubs.kist.re.kr/handle/201004/70595
ISSN
0955-2219
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KIST Publication > Article
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