Radical Polymers Alter the Carrier Properties of Semiconducting Carbon Nanotubes

Title
Radical Polymers Alter the Carrier Properties of Semiconducting Carbon Nanotubes
Authors
주용호Sanjoy MukherjeeBryan W. Boudouris
Keywords
radical polymers; single-walled carbon nanotubes; radical polymer carbon nanotube composite material; carbon nanotube doping; ambipolar organic field-effect transistors
Issue Date
2019-01
Publisher
ACS Applied Polymer Materials
Citation
VOL 1, NO 2-210
Abstract
Radical polymers are composed of nonconjugated macromolecular backbones and pendant groups that bear stable open-shell sites; these functional macromolecules have been utilized in myriad electrochemical, optoelectronic, and thermoelectric devices to date. Here, we combine radical polymers with semiconducting single-walled carbon nanotubes (SWCNTs) to form composite materials using a scalable fabrication process. Importantly, we are able to tune the charge carrier characteristics of the SWCNTs by controlling the macromolecular architecture of the radical polymer used to form the composite. This is a critical handle as creating stable, electron-transporting (i.e., n-type) SWCNT thin films using scalable processes is a long-sought goal in the field. Specifically, hole-transporting (i.e., p-type) SWCNT thin films were deposited using a simple drop-casting methodology. Then, a radical polymer thin film was coated on top of the SWCNT thin film in order to create a composite system. Three different radical polymer chemistries were evaluated in terms of their ability to manipulate the optoelectronic properties of the composite systems relative to the pristine SWCNT thin films. Two of the three radical polymer chemistries, poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) and poly(2,3-bis(2′,2′,6′,6′-tetramethylpiperidinylN-oxyl-4′-oxycarbonyl)-5-norbornene) (PTNB), contained different macromolecular backbones but shared the same nitroxide radical open-shell chemistry. Instead, the third radical polymer, poly(2,6-ditert-butyl-4-((3,5-ditert-butyl-4-phenoxyl)(4-vinylphenyl)methylene)cyclohexa-2,5-dienone) (PGSt), was based upon the galvinoxyl styrene radical. Neither of the nitroxidebased radical polymers demonstrated any significant electrochemical interaction with the SWCNT thin films. Conversely, the addition of the galvinoxyl styrene-based radical polymer converted the SWCNT thin films from ones that were uni
URI
http://pubs.kist.re.kr/handle/201004/70748
ISSN
2637-6105
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE