Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
- Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
- 이상윤; Matthias Niethammer; Matthias Widmann; Torsten Rendler; Naoya Morioka; Yu-Chen Chen; Rainer Stohr; Jawad Ul Hassan; Shinobu Onoda; Takeshi Ohshima; Amlan Mukherjee; Junichi Isoya; Nguyen Tien Son; Jorg Wrachtrup
- Issue Date
- Nature Communications
- VOL 10-5569-8
- Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efﬁ cient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on ﬂ uorescence detection and are limited by a low photon collection efﬁ ciency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic ﬁ elds. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.
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