Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Title
Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
Authors
이상윤Matthias NiethammerMatthias WidmannTorsten RendlerNaoya MoriokaYu-Chen ChenRainer StohrJawad Ul HassanShinobu OnodaTakeshi OhshimaAmlan MukherjeeJunichi IsoyaNguyen Tien SonJorg Wrachtrup
Issue Date
2019-12
Publisher
Nature Communications
Citation
VOL 10-5569-8
Abstract
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as effi cient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fl uorescence detection and are limited by a low photon collection effi ciency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fi elds. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.
URI
http://pubs.kist.re.kr/handle/201004/70806
ISSN
2041-1723
Appears in Collections:
KIST Publication > Article
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