Visualization of CVD-grown graphene on Cu film using area-selective ALD for quality management

Title
Visualization of CVD-grown graphene on Cu film using area-selective ALD for quality management
Authors
황준연남정태김경수홍경표이규현김성희김보람김기수박진성이준영정태환송영재최재붕조승민김근수김형근
Keywords
graphene; Interface analysis; TEM; quality control
Issue Date
2019-12
Publisher
Applied surface science
Citation
VOL 496, 143614
Abstract
The present study investigates the atomic layer deposition (ALD) of an Al2O3 film on graphene atop copper with water vapor (H2O), oxygen plasma (O-2 plasma) and ozone (O-3) serving as oxidants. With water vapor as an oxidant, surface-sensitive deposition results in significant differences in growth on single layer graphene (SLG) and multilayer graphene (MLG). Al2O3 completely covers areas of SLG, while virtually no Al2O3 is deposited on areas of MLG. The MLG areas are removed by O-2 plasma, and exposed copper areas are oxidized. Information about MLG, including the location, size, and density, can be determined by employing optical microscopy. Scanning electron microscopy (SEM), Raman spectroscopy, transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) are used to confirm the validity of the surface-selective deposition of Al2O3 on graphene grown on copper. We developed a process to distinguish SLG and MLG on copper. The characterization results were fed back to the synthesis conditions, and we confirmed that high-quality SLG can be grown on copper almost devoid of MLG. This characterization technique is suitable for large-area graphene (up to meter scale graphene), and can be utilized as feedback for growth and process conditions to ensure high-quality graphene.
URI
http://pubs.kist.re.kr/handle/201004/70828
ISSN
0169-4332
Appears in Collections:
KIST Publication > Article
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