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dc.contributor.author채근화-
dc.contributor.authorWon Ja Min-
dc.contributor.authorGabriel Marmitt-
dc.contributor.authorLyudmila Goncharova-
dc.contributor.authorKenji Kimura-
dc.contributor.authorTorgny Gustafsson-
dc.contributor.authorMatt Copel-
dc.contributor.authorJungkyu Ko-
dc.contributor.authorHyung­Ik Lee-
dc.contributor.authorSungho Lee-
dc.contributor.authorJaap van den Berg-
dc.contributor.authorKagnwon Jung-
dc.contributor.authorKyungsu Park-
dc.contributor.authorIgor Alencar-
dc.contributor.authorPedro L. Grande-
dc.contributor.authorDaeWon Moon-
dc.date.accessioned2021-06-09T04:23:51Z-
dc.date.available2021-06-09T04:23:51Z-
dc.date.issued2019-07-
dc.identifier.citationVOL 51, NO 7-721-
dc.identifier.issn0142-2421-
dc.identifier.other53820-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/70851-
dc.publisherSurface and interface analysis : SIA-
dc.subjectelectronic stopping power-
dc.subjectHfO2 ultrahin film-
dc.subjectMEIS-
dc.subjectRRT-
dc.titleRound­robin test of medium­energy ion scattering for quantitative depth profiling of ultrathin HfO2/SiO2/Si films-
dc.typeArticle-
dc.relation.page712721-
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