Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures
- Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures
- 박수형; Niklas Mutz; Tino Meisel; Holm Kirmse; Nikolai Severin; Jurgen P. Rabe; Emil List-Kratochvil; Norbert Koch; Christoph T. Koch; Sylke Blumstengel; Sergey Sadofev
- Issue Date
- Applied physics letters
- VOL 114, NO 16, 162101
- The application of transition metal dichalcogenides in optoelectronic, photonic, or valleytronic devices requires the growth of continuous monolayers, heterostructures, and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over the number of layers and the composition of two-dimensional systems. The versatility of the method is demonstrated on ternary monolayers of Mo1-xWxS2 and on heterostructures combining metallic TaS2 and semiconducting MoS2 layers. The fabricated ternary monolayers cover the entire composition range of x = 0 ... 1 without phase separation. Bandgap engineering and control over the spin-orbit coupling strength are demonstrated by absorption and photoluminescence spectroscopy. Vertical heterostructures are grown without intermixing. The formation of clean and atomically abrupt interfaces is evidenced by high-resolution transmission electron microscopy. Since both the metal components and the chalcogen are thermally evaporated, complex alloys and heterostructures can thus be prepared.
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