Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback
- Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback
- 정대환; Heming Huang; Jianan Duan; B. Dong; J. Norman; J. Bowers; F. Grillot
- Issue Date
- APL Photonics
- VOL 5, NO 1, 016103
- This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits.
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