Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback

Title
Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback
Authors
정대환Heming HuangJianan DuanB. DongJ. NormanJ. BowersF. Grillot
Issue Date
2020-01
Publisher
APL Photonics
Citation
VOL 5, NO 1, 016103
Abstract
This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits.
URI
http://pubs.kist.re.kr/handle/201004/70890
ISSN
2378-0967
Appears in Collections:
KIST Publication > Article
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