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dc.contributor.author정대환-
dc.contributor.authorHeming Huang-
dc.contributor.authorJianan Duan-
dc.contributor.authorB. Dong-
dc.contributor.authorJ. Norman-
dc.contributor.authorJ. Bowers-
dc.contributor.authorF. Grillot-
dc.date.accessioned2021-06-09T04:23:53Z-
dc.date.available2021-06-09T04:23:53Z-
dc.date.issued2020-01-
dc.identifier.citationVOL 5, NO 1, 016103-
dc.identifier.issn2378-0967-
dc.identifier.other54335-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/70890-
dc.description.abstractThis work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits.-
dc.publisherAPL Photonics-
dc.titleEpitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback-
dc.typeArticle-
dc.relation.page016103-
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