Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-Chi Block Copolymers
- Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-Chi Block Copolymers
- 고재현; Jan Doise; Ji Yeon Kim; Qingjun Zhu; Natsuko Kinoshita; Hyo Seon Suh; Paulina Rincon Delgadillo; Geert Vandenberghe; C. Grant Willson; Christopher J. Ellison
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 11, NO 51-48427
- Directed self-assembly (DSA) of high-chi block copolymer thin films is a promising approach for nano fabrication of features with length scale below 10 nm. Recent work has highlighted that kinetics are of crucial importance in determining whether a block copolymer film can self-assemble into a defect-free ordered state. In this work, different strategies for improving the rate of defect annihilation in the DSA of a silicon-containing, high-chi block copolymer film were explored. Chemo-epitaxial DSA of poly(4-methoxystyrene-block-4-trimethylsilylstyrene) with 5X density multiplication was implemented on 300 mm wafers by using production level nanofabrication tools, and the influence of different processes and material parameters on dislocation defect density was studied. It was observed that only at sufficiently low chi N can the block copolymer assemble into well-aligned patterns within a practical time frame. In addition, there is a clear correlation between the rate of the lamellar grain coarsening in unguided self-assembly and the rate of dislocation annihilation in DSA. For a fixed chemical pattern, the density of kinetically trapped dislocation defects can be predicted by measuring the correlation length of the unguided self-assembly under the same process conditions. This learning enables more efficient screening of block copolymers and annealing conditions by rapid analysis of block copolymer films that were allowed to self-assemble into unguided (commonly termed fingerprint) patterns.
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