Large Magnetoconductance in GaAs Induced by Impact Ionization

Title
Large Magnetoconductance in GaAs Induced by Impact Ionization
Authors
구현철김태엽주성중홍진기
Keywords
Magnetoresistance; Impact ionization,; Avalanche e?ect; Space-charge e?ect; GaAs
Issue Date
2019-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 75, NO 21-1020
Abstract
We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.
URI
http://pubs.kist.re.kr/handle/201004/70970
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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