Self-Powered Visible?Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes

Title
Self-Powered Visible?Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes
Authors
박민철송진동황도경박수형김대연강지훈안대환최현태안종태김지훈김민주안일호박종배이연진임성일
Keywords
2D MoTe2; 2D MoS2; semivertical geometry; heterojunction photodiode; visible?invisible multiband detection and imaging
Issue Date
2020-03
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 12, NO 9-10866
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p– n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p– n diodes and their optoelectronic application in self-powered visible– invisible multiband detection and imaging. Our MoTe2/MoS2 p– n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10– 5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible– invisible multiband image sensor based on the MoTe2/MoS2 p– n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.
URI
http://pubs.kist.re.kr/handle/201004/71014
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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