Partially-depleted SONOS FinFET for unified RAM (URAM) - unified function for high speed 1T DRAM and nonvolatile memory

Title
Partially-depleted SONOS FinFET for unified RAM (URAM) - unified function for high speed 1T DRAM and nonvolatile memory
Authors
임매순한진우류승완김청진김성호최성진김진수김광희이기성오재섭송명호박윤창김정우최양규
Issue Date
2008-07
Publisher
IEEE Electron Device Letters
Citation
VOL 29, NO 7-783
Abstract
Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.
URI
http://pubs.kist.re.kr/handle/201004/71041
ISSN
0741-3106
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KIST Publication > Article
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