Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes

Title
Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes
Authors
장준연송진동장혜정강수석안도열임주영S.H. YangS. KoS.H. ParkS.J. ParkD.S. KIm
Keywords
Cuprous Iodide; p-type semiconductor; light emitting diode; blue light; ultra-violet
Issue Date
2020-03
Publisher
Scientific Reports
Citation
VOL 10-8
Abstract
Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties, including a large exciton binding energy at room temperature and a very small piezoelectric coefficient. The major obstacle to its application is the difficulty in growing a single-crystal epitaxial film of cuprous halides. We first demonstrate the single crystal epitaxy of high quality cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy. Enhanced photoluminescence on the order of magnitude larger than that of GaN and continuous-wave optically pumped lasing were found in MBE grown CuI film. The intrinsic p-type characteristics of CuI were confirmed using an n-AlGaN/p-CuI junction that emits blue light. The discovery will provide an alternative way towards highly efficient optoelectronic devices compatible with both Si and III-nitride technologies.
URI
http://pubs.kist.re.kr/handle/201004/71146
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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