Large-Area Fabrication of Patterned ZnO-nanowire Arrays Using Light Stamping Lithography

Title
Large-Area Fabrication of Patterned ZnO-nanowire Arrays Using Light Stamping Lithography
Authors
조상호황재권서은경명재민성명모
Issue Date
2009-12
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 1, NO 12-2847
Abstract
We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in, Si wafers.
URI
http://pubs.kist.re.kr/handle/201004/71161
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE