High Performance N-type Organic-inorganic Nanohybrid Semiconductors for Flexible Electronic Devices”
- High Performance N-type Organic-inorganic Nanohybrid Semiconductors for Flexible Electronic Devices”
- 조상호; 박예록; 한규석; 이병훈; 이광희; 임성일; 성명모
- Issue Date
- Organic electronics
- VOL 12, NO 2-352
- We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 degrees C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm(2)/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.