High Performance N-type Organic-inorganic Nanohybrid Semiconductors for Flexible Electronic Devices”

Title
High Performance N-type Organic-inorganic Nanohybrid Semiconductors for Flexible Electronic Devices”
Authors
조상호박예록한규석이병훈이광희임성일성명모
Issue Date
2011-02
Publisher
Organic electronics
Citation
VOL 12, NO 2-352
Abstract
We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 degrees C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm(2)/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.
URI
http://pubs.kist.re.kr/handle/201004/71164
ISSN
1566-1199
Appears in Collections:
KIST Publication > Article
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