High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition
- High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition
- 황준연; 이원기; 손명우; 지상수; 김소영; 김용현; 오병윤; 이병훈; 함문호
- graphene; N doping; CVD; defect
- Issue Date
- VOL 159-585
- Modulation of the electrical properties of graphene is of significant importance in advancing graphene electronics: it can be achieved by a Fermi level shift induced by electron acceptor/donor doping. Suitable doping methods involving low-temperature processes and offering long-term stability are imperative to practical applications for such materials. Here, we demonstrate a two-step chemical vapor deposition (CVD) technique for direct synthesis of N-doped graphene film from a pyridine feed-stock at 300 degrees C under ambient pressure. We extended the synthesis-classified into nucleation and lateral growth steps-by controlling the carbon partial pressure in the processing gases. This led to large-area, continuous N-doped graphene films of excellent quality with full surface coverage: for example, a film size of 2 in(2), optical transmittance of 97.6%, and electron mobility of 1400 cm(2) V-1 s(-1). Our modified CVD method is expected to facilitate the direct synthesis of N-doped graphene in device manufacturing processes toward practical applications while keeping the underlying devices intact.
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