Fabrication of TiO2/Tin-Doped Indium Oxide-Based Photoelectrode Coated with Overlayer Materials and Its Photoelectrochemical Behavior
- Fabrication of TiO2/Tin-Doped Indium Oxide-Based Photoelectrode Coated with Overlayer Materials and Its Photoelectrochemical Behavior
- 박상백; 이상욱; 김동회; 이찬우; 조인선; 홍국선
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 12, NO 2-1394
- The photoelectrochemical properties of TiO2-based photoelectrodes with metal oxide overlayers (e.g., ZnO, ZrO2, MgO, and Al2O3) were investigated. The metal oxides were deposited on TiO2/tin-doped indium oxide (ITO) films by spin-coating metal-alkoxide precursors. The formation of the overlayers was confirmed by energy dispersive X-ray spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM). Each overlayers were well-coated on the TiO2-based films and have approximately 2 nm thickness. The prepared films were used as photoanodes in a photoelectrochemical system with a Pt counter electrode to evaluate hydrogen production performance. Comparing with other overlayers, the ZnO-coated photoelectrode exhibits the highest rate of hydrogen evolution and which is better than the uncoated one. From the photoelectrochemical and spectroscopic study, the superior hydrogen production property of the ZnO-coated TiO2 photoelectrode was attributed to both the higher light absorbance of ZnO compared to TiO2 and the formation of hydroxyl groups at the ZnO surface.
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