Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors

Title
Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors
Authors
김형준한재훈정연주김성광금대명임형락김상현
Keywords
Ge-OI; wafer bonding; synapse; GaAs; photodetector
Issue Date
2020-04
Publisher
IEEE Electron Device Letters
Citation
VOL 41, NO 4-608
Abstract
In this letter, we propose the photo-responsible synaptic devices by using stackable GaAs photodetectors (PDs) and Ge-on-insulator (Ge-OI) synaptic transistors for the future three-dimensional (3D) artificial vision sensors. The photo-responsible synapse showed good photo-responding synaptic behaviors depending on the incident light to GaAs PD, which changes the hole injection into the Ge-OI transistors, resulting in the change in potentiation/depression characteristics. The training simulation highlighted the fabricated photo-responsible synapse can provide high colored pattern recognition tasks for semiconductor-based hardware systems.
URI
http://pubs.kist.re.kr/handle/201004/71265
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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