Area­-Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming­Free, Self­Rectification, and Nonlinear Characteristics

Title
Area­-Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming­Free, Self­Rectification, and Nonlinear Characteristics
Authors
윤정호권대은김지훈권영재우경석황철성
Issue Date
2020-06
Publisher
Physica status solidi. Rapid Research Letters : PSS.
Citation
VOL 2020, 2000209
Abstract
Herein, electronic bipolar resistive switching of Pt/Al2O3/Si3N3.0/Ti device isinvestigated. The Pt/Si3N3.0/Ti device demonstrates bipolar resistive switchingwith set (reset) at negative (positive) bias, and the mechanism is revealed tobe that the conduction  lament, formed by percolation of the traps in defectivesilicon nitride thin  lm, is involved in the resistive switching. However, instead ofthe conduction  lament, trapping and detrapping of the electrons in the trap sitesof Si3N3.0become the dominant switching mechanism by introducing an Al2O3barrier layer between Pt and Si3N3.0, and the device has forming-free, self-rectifying, and nonlinear characteristics, which are necessary to the cross-bararray (CBA) con guration. The optimized thickness of the Al2O3barrier layeris 4 nm. A detailed electrical analysis is performed to identify the switchingmechanism of the device. Also, the read/write margin is calculated using Hsimulation program with integrated circuit emphasis (HSPICE) to estimate theavailable CBA cell size.
URI
http://pubs.kist.re.kr/handle/201004/71458
ISSN
1862-6254
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE