Carrier?phonon interaction of GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy

Title
Carrier?phonon interaction of GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy
Authors
한일기송진동여인아김종수
Keywords
quantum dot; carrier-phonon interaction; droplet epitaxy
Issue Date
2020-10
Publisher
Journal of materials science, Materials in electronics
Citation
VOL 31, NO 19-16342
Abstract
We examined several types of GaAs/Al0.3Ga0.7As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton– phonon coupling channels of several QD types with diferent temperature dispersions. Each phonon dispersion was calculated for up to three diferent coupled modes in a phonon feld. Nanoscale phonon engineering can exploit the dynamics of exciton– phonon interactions for the design of efcient acousto-excitonic devices and engineered QD single-photon sources.
URI
http://pubs.kist.re.kr/handle/201004/71968
ISSN
0957-4522
Appears in Collections:
KIST Publication > Article
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