Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias

Title
Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias
Authors
전대영Mireille MouisSylvain BarraudGerard Ghibaudo
Keywords
Analytical equations; substrate bias; effective channel thickness (tsi_eff); variation in threshold voltage; junctionless transistors (JLTs); mobility degradation; numerical simulation
Issue Date
2020-11
Publisher
IEEE transactions on electron devices
Citation
VOL 67, NO 11-4740
Abstract
Substrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (tsi_eff) was effectively modulated by back-gate bias (Vgb). The variation in threshold voltage (Vth) and mobility degradation were observed in the reduced tsi_eff, due to the negative Vgb-induced depletion of free electrons. The Vgb effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results.
URI
http://pubs.kist.re.kr/handle/201004/71974
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
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