Quasicrystalline phase-change memory

Title
Quasicrystalline phase-change memory
Authors
장혜정서호영Eun-Sung LeeJoung E. YooDu S. YoonSung D. KimYongjoo KimSoobin HwangDasol KimHyeong-Chai JeongWon T. KimDae-Hong KoChoonghee ChoYongjoon ChoiDo H. KimMann-Ho Cho
Issue Date
2020-08
Publisher
Scientific Reports
Citation
VOL 10, 13673
Abstract
Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) with low phase-change energy and sufcient thermal stability is difcult because phase-change energy and thermal stability decrease simultaneously as the amorphous phase destabilizes. This issue arising from the tradeof relationship between stability and energy consumption can be solved by reducing the entropic loss of phase-change energy as apparent in crystalline-to-crystalline phase-change process of a GeTe/Sb2Te3 superlattice structure. A paradigm shift in atomic crystallography has been recently produced using a quasi-crystal, which is a new type of atomic ordering symmetry without any linear translational symmetry. This paper introduces a novel class of PCMs based on a quasicrystalline-toapproximant crystalline phase-change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure. This report includes a new concept that reduces entropic loss using a quasicrystalline state and takes the frst step in the development of new PCMs with signifcantly low phase-change energy and considerably high thermal stability.
URI
http://pubs.kist.re.kr/handle/201004/72141
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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