Effect of Oxygen Vacancy Gradient on Resistive Memory of Ion Irradiated Ca-doped YMnO3 Thin Films
- Effect of Oxygen Vacancy Gradient on Resistive Memory of Ion Irradiated Ca-doped YMnO3 Thin Films
- 채근화; Kunalsinh N. Rathod; Keval Gadani; Davit Dhruv; Vipul G. Shrimali; Sapana Solanki; Ashvini D. Joshi; Jitendra P. Singh; Kandasami Asokan; Piyush S. Solanki; Nikesh A. Shah
- ion irradiation; Y0.95Ca0.05MnO3 (YCMO); thin films; X-ray diffraction; Raman spectroscopy; Rutherford backscattering spectrometry; oxygen vacancies; near-edge x-ray absorption fine structure; resistive switching ratio
- Issue Date
- Journal of Vacuum Science and Technology B
- VOL 38, NO 6-062208
- In this study, we investigate the effect of ion irradiation on Y0.95Ca0.05MnO3 (YCMO) thin films. X-ray diffraction and Raman spectroscopy measurements show single-phase and strain/stress modifications with ion irradiation. Rutherford backscattering spectrometry confirms the variation in oxygen vacancies. The near-edge x-ray absorption fine structure shows valence state reduction of Mn ions, which is attributed to oxygen vacancies. The optimal resistive switching ratio is observed at the lowest fluence (1 × 1011 ions/cm2 ) of ion irradiation. At higher fluences (1 × 1012 and 1 × 1013 ions/cm2 ), the strain relaxation and oxygen vacancy annihilation are ascribed to the local annealing effect. The double logarithmic curve and modified Langmuir？Child’s law satisfy the space charge limited conduction mechanism in all thin films. These results suggest the crucial role of irradiation-induced oxygen vacancies in modifying the electronic structure and electrical properties of YCMO thin films.
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