Large-area dry transfer of single-crystalline epitaxial bismuth thin films

Title
Large-area dry transfer of single-crystalline epitaxial bismuth thin films
Authors
정대환Emily S. WalkerSeung Ryul NaStephen D. MarchJoon-Seok KimTanuj TrivediWei LiLi TaoMinjoo L. LeeKenneth M. LiechtiDeji AkinwandeSeth R. Bank
Issue Date
2016-11
Publisher
Nano letters
Citation
VOL 16, NO 11-6938
Abstract
We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth’s unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.
URI
http://pubs.kist.re.kr/handle/201004/72275
ISSN
1530-6984
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KIST Publication > Article
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