Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si

Title
Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
Authors
정대환ALAN Y. LIUJON PETERSXUE HUANGJUSTIN NORMANMINJOO L. LEEARTHUR C. GOSSARDJOHN E. BOWERS
Issue Date
2017-01
Publisher
Optics letters
Citation
VOL 42, NO 2-341
Abstract
We demonstrate the first electrically pumped continuouswave (CW) III?V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860 A?cm2 and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.
URI
http://pubs.kist.re.kr/handle/201004/72277
ISSN
0146-9592
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KIST Publication > Article
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