1.3 μm submilliamp threshold quantum dot micro-lasers on Si
- 1.3 μm submilliamp threshold quantum dot micro-lasers on Si
- 정대환; YATING WAN; Justin Norman; Qiang Li; M. J. KENNEDY; DI LIANG; CHONG ZHANG; DUANNI HUANG; ZEYU ZHANG; ALAN Y. LIU; ALFREDO TORRES; ARTHUR C. GOSSARD; EVELYN L. HU; KEI MAY LAU; JOHN E. BOWERS
- Issue Date
- VOL 4, NO 8-944
- As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III-V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.
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