1.3 μm submilliamp threshold quantum dot micro-lasers on Si

Title
1.3 μm submilliamp threshold quantum dot micro-lasers on Si
Authors
정대환YATING WANJustin NormanQiang LiM. J. KENNEDYDI LIANGCHONG ZHANGDUANNI HUANGZEYU ZHANGALAN Y. LIUALFREDO TORRESARTHUR C. GOSSARDEVELYN L. HUKEI MAY LAUJOHN E. BOWERS
Issue Date
2017-08
Publisher
Optica
Citation
VOL 4, NO 8-944
Abstract
As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III-V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.
URI
http://pubs.kist.re.kr/handle/201004/72279
ISSN
2334-2536
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KIST Publication > Article
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