O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si
- O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si
- 정대환; Yating Wan; Justin Norman; Chen Shang; Ian MacFarlane; Qiang Li; M.J. Kennedy; Arthur C. Gossard; Kei May Lau; John E. Bowers
- Issue Date
- Optics express
- VOL 25, NO 22-26860
- We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50-μm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.
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