Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
- Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
- 정대환; Yating Wan; Zeyu Zhang; Ruilin Chao; Justin Norman; Chen Shang; Qiang Li; MJ Kennedy; Di Liang; Chong Zhang; Jin-Wei Shi; Arthur C. Gossard; Kei May Lau; John E. Bowers
- Issue Date
- Optics express
- VOL 25, NO 22-27723
- We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers.
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