Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

Title
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
Authors
정대환Yating WanZeyu ZhangRuilin ChaoJustin NormanChen ShangQiang LiMJ KennedyDi LiangChong ZhangJin-Wei ShiArthur C. GossardKei May LauJohn E. Bowers
Issue Date
2017-10
Publisher
Optics express
Citation
VOL 25, NO 22-27723
Abstract
We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers.
URI
http://pubs.kist.re.kr/handle/201004/72283
ISSN
1094-4087
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KIST Publication > Article
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