Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency

Title
Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency
Authors
정대환Zeyu ZhangJustin NormanRobert HerrickM.J. KennedyPari PatelKatherine TurnlundCatherine JanYating WanArthur C. GossardJohn E. Bowers
Issue Date
2018-03
Publisher
ACS photonics
Citation
VOL 5, NO 3-1100
Abstract
Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum dot lasers from off-cut Si to on-axis (001) Si substrates. Here, we report significantly improved performance and reliability of quantum dot lasers enabled by a low threading dislocation density GaAs buffer layer. Continuous-wave threshold currents as low as 6.2 mA and output powers of 185 mW have been achieved at 20 °C. Reliability tests after 1500 h at 35 °C showed an extrapolated mean-time-to-failure of more than a million hours. Direct device transparency and amplified spontaneous emission measurements reveal an internal optical loss as low as 2.42 cm?1 and injection efficiency of 87%. This represents a significant stride toward efficient, scalable, and reliable III?V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with CMOS foundries.
URI
http://pubs.kist.re.kr/handle/201004/72286
ISSN
2330-4022
Appears in Collections:
KIST Publication > Article
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