490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si

Title
490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si
Authors
정대환Songtao LiuJustin C. NormanM. J. KennedyArthur C. GossardJohn E. Bowers
Issue Date
2018-04
Publisher
Electronics letters
Citation
VOL 54, NO 7-433
Abstract
We demonstrate, for the first time, a single section passively modelocked InAs/InGaAs quantum dot laser directly grown on on-axis (001) GaP/Si substrate. The laser has a continuous-wave threshold current of 34 mA at 20°C. By forward biasing the laser gain section current at 470 mA, 490 fs pulse generation with 31 GHz repetition rate can be obtained. This simple femtosecond pulse generation structure with CMOS fabrication compatibility makes the laser a promising light source candidate in future large-scale silicon photonic applications.
URI
http://pubs.kist.re.kr/handle/201004/72287
ISSN
0013-5194
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KIST Publication > Article
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