Recent Advances in InAs Quantum Dot Lasers Grown on On­Axis (001) Silicon by Molecular Beam Epitaxy

Title
Recent Advances in InAs Quantum Dot Lasers Grown on On­Axis (001) Silicon by Molecular Beam Epitaxy
Authors
정대환Justin NormanYating WanSongtao LiuRobert HerrickJennifer SelvidgeKunal MukherjeeArthur C. GossardJohn E. Bowers
Issue Date
2019-01
Publisher
Physica Status Solidi. A, Applications and Materials Science
Citation
VOL 216, NO 1, 1800602
Abstract
Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on­axis (001) silicon are reported. Fabry­Perot QD lasers show a CW threshold current of 4.8mA at 20°C, extrapolated laser lifetimes more than 10 million hours when aged at 35°C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ~0.1. Ultra­small microring QD lasers reveal a CW threshold of 0.5mA and single­section mode­locked QD lasers demonstrate 490fs ultra­short pulses at a 31GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.
URI
http://pubs.kist.re.kr/handle/201004/72295
ISSN
1862-6300
Appears in Collections:
KIST Publication > ETC
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