Understanding the Charge Transport Mechanism in MoS2 Transistors with Graphene Electrodes

Title
Understanding the Charge Transport Mechanism in MoS2 Transistors with Graphene Electrodes
Authors
황도경장지수
Keywords
Molybdenum disulfide; Graphene; Schottky barrier height; Field-effect transistors
Issue Date
2020-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 77-1011
Abstract
Two-dimensional transition-metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation electronics owing to their excellent semiconducting properties. However, metalTMDs junctions are of particular interest as they have become a major limiting factors to further improvements in TMD-based device performance. Here, we investigate the charge transport of MoS2 transistors contacted with Ti/Au and graphene electrodes. Compared to a conventional Ti/Au contact, the MoS2 devices with graphene electrodes exhibit improved electrical properties (field-effect mobility, subthreshold swing, and low off-state current). Such a device improvement could be attributed to efficient electron injection arising from the tunable graphene Fermi level as well as the high hole barrier height, which significantly reduces the off-state current caused by hole transport. Furthermore, a simple Schottky barrier model has been employed to explain the observed transfer characteristic of MoS2 transistors with two different contacts. Our finding provides significant insights into the understanding of charge transport in TMD-based transistors for future 2D electronics.
URI
http://pubs.kist.re.kr/handle/201004/72319
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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