Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings

Title
Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings
Authors
송진동Juyeong JangSeunghwan LeeMinju KimSunwoo Woo,Inhong KimJihoon KyhmRobert A. TaylorKwangseuk Kyhm
Keywords
GaAs; droplet; quantum dots
Issue Date
2020-11
Publisher
Applied physics letters
Citation
VOL 117, 213101
Abstract
We have employed a variable stripe length method in order to measure the optical gain of GaAs/AlGaAs quantum rings. Although the large lateral diameter of quantum rings (50 nm) with a few nm size distribution is expected to cause a small spectral inhomogeneity (1%), a broad gain width (300 meV) was observed. This result was attributed to a variation of the vertical heights and variations in localized states that exhibit crescent shaped wavefunctions, whereby the energy levels are distributed over a broad spectral range. When the excitation intensity is decreased, irregular peaks appear in the gain spectrum gradually. Similar phenomena were also observed as the temperature increased. We conclude that excited carriers in quantum rings are distributed stochastically at various localized states and that the population inversion is sensitive to both excitation intensity and temperature.
URI
http://pubs.kist.re.kr/handle/201004/72339
ISSN
0003-6951
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KIST Publication > Article
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