Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material

Title
Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material
Authors
최준우Memgmeng YangQian LiRajesh V. ChopdekarCamelia StanStefano CabriniSheng WangTianye WangNan GaoAndreas SchollNobumichi TamuraChanyong HwangFeng WangZiqiang Qiu
Issue Date
2020-04
Publisher
Advanced quantum technologies
Citation
VOL 3, NO 4, 2000017
Abstract
Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe3GeTe2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe3GeTe2 by the amount of 10?3 Ga ??3 could greatly enhance the Fe3GeTe2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element­resolved X­ray absorption spectroscopy show little changes in the Fe3GeTe2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe3GeTe2 magnetization from out­of­plane direction at low temperature to in­plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature.
URI
http://pubs.kist.re.kr/handle/201004/72361
ISSN
2511-9044
Appears in Collections:
KIST Publication > Article
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