Large Temperature-Independent Magnetoresistance without Gating Operation in Monolayer Graphene

Title
Large Temperature-Independent Magnetoresistance without Gating Operation in Monolayer Graphene
Authors
이수연Jihoon JeonDuk Hyun LeeYeon Soo KimHyun-Jong ChungSung Ho JhangYongkyung KwonBae Ho Park
Keywords
temperature-independent magnetoresistance; disorder; graphene; BiFeO3 nano-island array; without gating
Issue Date
2020-11
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 12, NO 47-53140
Abstract
Temperature-independent magnetoresistance (TIMR) has been studied for applications in magnetic field sensors operating in wide temperature ranges. Graphene is considered as one of the best candidates for achieving nonsaturating and large TIMR through engineering disorders. Nevertheless, large TIMR has not been achieved in disordered graphene with intrinsic defects, such as chemical doping and atomic dislocations. In this work, by introducing extrinsic defects, we realize nonsaturating and large TIMR in monolayer graphene transferred on a BiFeO3 nanoisland array (G/BFO-NIA). Furthermore, the G/BFO-NIA device exhibits a significantly larger MR (∼250% under 9 T) than other materials without gating operation, demonstrating its application feasibility. It is shown that the large MR is a result of the coexistence of electrons and holes with almost the same density, and the observed TIMR originates from the temperature dependence of carrier transport in graphene and of the dielectric property of BFO-NIA.
URI
http://pubs.kist.re.kr/handle/201004/72426
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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