150 KeV Cu- ion- implantation in SrVO3 thin films: A study of Cu induced defect states

Title
150 KeV Cu- ion- implantation in SrVO3 thin films: A study of Cu induced defect states
Authors
원성옥Himani SaraswatSurekha ChaudharyMayora VarshneyDevarani DeviFouran SinghHyun-Joon ShinAditya Sharma
Keywords
SrVO3; Thin films; Ion-implantation; Defects
Issue Date
2020-11
Publisher
Vacuum
Citation
VOL 181-1096
Abstract
Investigations on the extrinsic defects induced alteration in B-O6 octahedra, energy band-structure amendments and physical assets of ABO3 perovskites are technologically important and require modest approaches for the defect creation and their investigations. In this study, Cu defects have been assimilated in SrVO3 films using 150 KeV Cu ion-implantation with two different ion fluences; 1.63 × 1015 ion/cm2 and 8.15 × 1015 ion/cm2. The implanted Cu ions do not make metallic/oxide clusters in SrVO3 films, as confirmed by XRD studies, but have facilitated the lattice parameter enlargement and energy band-gap narrowing by creating their defect states and V?O6 octahedra distortion. NEXAFS spectra at Cu L-edge have confirmed the Cu2+ ions in low/high Cu doses implanted SrVO3 films. Cu defects induced V?O6 octahedra distortion has manifested a diverse ligand field interaction between V 3 d and O 2p orbitals and has narrowed the; (i) energy gap of V 2p3/2 and V 2p1/2 transitions and (ii) energy gap between t2g/eg and the O 2p and metal (n+1)sp hybridized orbitals, leading to the band-structure alteration of SrVO3 films. Mechanistic understanding of band-structure perturbation is discussed in the light of ion-solid interaction induced defect formation in SrVO3 thin films.
URI
http://pubs.kist.re.kr/handle/201004/72483
ISSN
0042-207X
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KIST Publication > Article
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