Valence State and Co-ordination of Implanted Ions in MgO

Title
Valence State and Co-ordination of Implanted Ions in MgO
Authors
채근화B. KaurR. BhardwajJ. P. SinghK. AsokanN. GoyalS. Gautam
Keywords
Valence State; radio frequency (RF) sputtering; transition metal (TM) ion; ion implantation; coordination number; electronic structure
Issue Date
2020-05
Publisher
AIP Conference Proceedings
Citation
VOL 2220-090003
Abstract
MgO thin films are grown on Si(100)-substrate by radio frequency (RF) sputtering technique and then implanted with transition metal (TM) ions i.e. Co, Cu and Ni. The ion implantation is performed at 100 keV with five fluences of 1 x 1015 (1E15), 5 x 1015 (5E15), 1 x 1016 (1E16), 2.5 x 1016 (2.5E16) and 5 x 1016 (5E16) ions/cm2, respectively. Stopping and Range of Ions in Matter (SRIM) calculations and Transport of Ions in Matter (TRIM) simulations are performed to estimate the doping concentration, average vacancy/ion, projected range etc. for implanted ions. These calculations are further cross-checked using high resolution transmission electron microscopy (HRTEM) studies. X-ray absorption spectroscopy (XAS) measurements performed at metal K and L3,2 -edges reveal the valance state, co-ordination number to explore the electronic structure of modified MgO matrix.
URI
http://pubs.kist.re.kr/handle/201004/72520
ISSN
1551-7616
Appears in Collections:
KIST Publication > Conference Paper
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