Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
- Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
- 송종한; 임원철; 박종극; 김인호; 이수연; 김재욱; 곽준영; 박종길; 정연주; 김건희; 허수만; 박수진; 주병권; 정두석
- Artificial synapse; Memristor; Neuromorphic computing; Analog memristor; Ion implantation; Artificial Neural Network; Conductive Bridge RAM
- Issue Date
- NPG Asia Materials
- VOL 12, NO 77-13
- Conductive bridging random access memory (CBRAM) has been considered to be a promising emerging device for artificial synapses in neuromorphic computing systems. Good analog synaptic behaviors, such as linear and symmetric synapse updates, are desirable to provide high learning accuracy. Although numerous efforts have been made to develop analog CBRAM for years, the stochastic and abrupt formation of conductive filaments hinders its adoption. In this study, we propose a novel approach to enhance the synaptic behavior of a SiNx/a-Si bilayer memristor through Ge implantation. The SiNx and a-Si layers serve as switching and internal current limiting layers, respectively. Ge implantation induces structural defects in the bulk and surface regions of the a-Si layer, enabling spatially uniform Ag
migration and nanocluster formation in the upper SiNx layer and increasing the conductance of the a-Si layer. As a result, the analog synaptic behavior of the SiNx/a-Si bilayer memristor, such as the nonlinearity, on/off ratio, and retention time, is remarkably improved. An artificial neural network simulation shows that the neuromorphic system with the implanted SiNx/a-Si memristor provides a 91.3% learning accuracy mainly due to the improved linearity.
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