Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation

Title
Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
Authors
송종한임원철박종극김인호이수연김재욱곽준영박종길정연주김건희허수만박수진주병권정두석
Keywords
Artificial synapse; Memristor; Neuromorphic computing; Analog memristor; Ion implantation; Artificial Neural Network; Conductive Bridge RAM
Issue Date
2020-12
Publisher
NPG Asia Materials
Citation
VOL 12, NO 77-13
Abstract
Conductive bridging random access memory (CBRAM) has been considered to be a promising emerging device for artificial synapses in neuromorphic computing systems. Good analog synaptic behaviors, such as linear and symmetric synapse updates, are desirable to provide high learning accuracy. Although numerous efforts have been made to develop analog CBRAM for years, the stochastic and abrupt formation of conductive filaments hinders its adoption. In this study, we propose a novel approach to enhance the synaptic behavior of a SiNx/a-Si bilayer memristor through Ge implantation. The SiNx and a-Si layers serve as switching and internal current limiting layers, respectively. Ge implantation induces structural defects in the bulk and surface regions of the a-Si layer, enabling spatially uniform Ag migration and nanocluster formation in the upper SiNx layer and increasing the conductance of the a-Si layer. As a result, the analog synaptic behavior of the SiNx/a-Si bilayer memristor, such as the nonlinearity, on/off ratio, and retention time, is remarkably improved. An artificial neural network simulation shows that the neuromorphic system with the implanted SiNx/a-Si memristor provides a 91.3% learning accuracy mainly due to the improved linearity.
URI
http://pubs.kist.re.kr/handle/201004/72614
ISSN
1884-4049
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