Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si
- Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si
- 최원준; 한재훈; 정대환; 강수석; 류근환; 라파엘 추; 우승완; 이인환
- dislocation filter layer; InAs photodetector on Si; high quality III-V buffer on Si; InAlAs graded buffer
- Issue Date
- Applied physics letters
- VOL 117, 262106
- We demonstrate a low threading dislocation density (TDD) and smooth surface InAs layer epitaxially grown on Si by suppressing phase separation of InxAl1xAs (x ¼ 0 to 1) graded buffer and by inserting a tensile-strained In0.95Al0.05As dislocation filter layer. While keeping the total III？V layer below 2.7 lm to avoid thermal cracks, we have achieved a sixfold reduction of TDD in InAs on Si compared to the unoptimized structure. We found a strong correlation between the metamorphic InAs surface roughness and TDD as a function of InxAl1xAs buffer thickness. An optimal thickness of 175 nm was obtained where both phase separation and 3D islanding growth were suppressed. Moreover, a tensile-strained In0.95Al0.05As dislocation filter layer and high growth temperature of the InAs cap layer further assisted the dislocation reduction process, which led to a TDD to 1.37 108 cm2 . Finally, an InAs p-i-n photodetector grown on the optimized InAs/Si template confirmed its high quality by showing an improved responsivity from 0.16 to 0.32 A/W at a 2 lm wavelength.
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