Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Title
Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si
Authors
최원준한재훈정대환강수석류근환라파엘 추우승완이인환
Keywords
dislocation filter layer; InAs photodetector on Si; high quality III-V buffer on Si; InAlAs graded buffer
Issue Date
2020-12
Publisher
Applied physics letters
Citation
VOL 117, 262106
Abstract
We demonstrate a low threading dislocation density (TDD) and smooth surface InAs layer epitaxially grown on Si by suppressing phase separation of InxAl1xAs (x ¼ 0 to 1) graded buffer and by inserting a tensile-strained In0.95Al0.05As dislocation filter layer. While keeping the total III?V layer below 2.7 lm to avoid thermal cracks, we have achieved a sixfold reduction of TDD in InAs on Si compared to the unoptimized structure. We found a strong correlation between the metamorphic InAs surface roughness and TDD as a function of InxAl1xAs buffer thickness. An optimal thickness of 175 nm was obtained where both phase separation and 3D islanding growth were suppressed. Moreover, a tensile-strained In0.95Al0.05As dislocation filter layer and high growth temperature of the InAs cap layer further assisted the dislocation reduction process, which led to a TDD to 1.37 108 cm2 . Finally, an InAs p-i-n photodetector grown on the optimized InAs/Si template confirmed its high quality by showing an improved responsivity from 0.16 to 0.32 A/W at a 2 lm wavelength.
URI
http://pubs.kist.re.kr/handle/201004/72683
ISSN
0003-6951
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KIST Publication > Article
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