Rashba Effect in Functional Spintronic Devices

Title
Rashba Effect in Functional Spintronic Devices
Authors
구현철최준우박태언김경환김한성박은상홍익선김성빈고경춘오정현이동규이경진
Keywords
Rashba effect; spintronic device; spin transistor; spin-orbit torque
Issue Date
2020-12
Publisher
Advanced materials
Citation
VOL 32, NO 51-2002117-19
Abstract
Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high­performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin?orbit torque devices. For spin field­effect transistors, the gate­voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all­electric spin field­effect transistors. For spin?orbit torque devices, recent theories and experiments on interface­generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.
URI
http://pubs.kist.re.kr/handle/201004/72694
ISSN
0935-9648
Appears in Collections:
KIST Publication > Article
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